IGBT+FRD芯片（六代）

【中文】采用超精细沟槽元胞设计、场截止与复合沟槽技术，具寿命控制、低导通及软恢复特点。IGBT电压600V-3300V、电流15A-300A；FRD电压650V-1700V、电流8A-300A。Vcesat减小20%，电流密度较上代提升40%。
【English】Using ultra-fine trench cell, field-stop and composite trench technologies, the chips offer global and local lifetime control with low conduction and soft-recovery behavior. IGBTs span 600V-3300V and 15A-300A; FRD diodes span 650V-1700V and 8A-300A. Vcesat drops 20% and current density rises 40% over the prior generation.