SiC SBD芯片

【中文】采用MPS技术制造，电压650V-1200V，单颗芯片导通电阻最低可到11mΩ，具备低开关损耗，较IGBT模块降低30%以上，最高工作温度可提升至200℃。适用于高频电源、汽车OBC、DC/DC、充电桩、光伏逆变器及储能变流器等应用领域。
【English】Built with MPS technology, SiC SBD chips cover 650V-1200V with on-resistance as low as 11 mOhm. They deliver low switching loss, more than 30% lower than IGBT modules, and raise the maximum working temperature to 200 C, serving high-frequency power supplies, automotive OBC, DC/DC, charging piles, PV and storage.