SiC MOSFET芯片

【中文】采用高可靠性平面栅技术，电压650V-1200V，单颗芯片电流能力最高50A。采用开尔文源极引脚与叠层低感设计，大幅降低模块寄生电感，高频开关性能优异，可靠性高，适用于高频电源等对效率要求严苛的场合。
【English】Using a highly reliable planar gate process, SiC MOSFET chips cover 650V-1200V with up to 50 A per die. Kelvin source pins and stacked low-inductance design greatly reduce module parasitic inductance, delivering strong high-frequency switching performance and reliability for demanding power supply applications.