SiC模块

【中文】具备低开关损耗，较IGBT模块降低30%以上，最高工作温度可提升至200℃；采用开尔文源极引脚、叠层低感设计，大幅降低模块寄生电感。应用领域覆盖汽车OBC、DC/DC、充电桩、光伏逆变器、储能变流器及高频电源。
【English】SiC modules offer switching loss more than 30% lower than IGBT modules and raise the maximum working temperature to 200 C. Kelvin source pins and stacked low-inductance design cut module parasitic inductance. Applications include automotive OBC, DC/DC, charging piles, PV inverters, PCS and high-frequency power supplies.