SGT MOSFET芯片

【中文】屏蔽栅沟槽结构优化正面沟槽结构，具备更低的米勒电容与更高的效率，导通电阻最低可到1.7mΩ，电压覆盖40V-200V。面向新能源领域与工控领域的电机驱动、DC/DC、UPS等应用方向。
【English】The shielded-gate trench structure optimizes the front trench, giving lower Miller capacitance and higher efficiency. On-resistance drops as low as 1.7 mOhm across a 40V-200V range, targeting motor drives, DC/DC converters and UPS systems in new energy and industrial control.