八代IGBT芯片（技术预研）

【中文】八代IGBT芯片技术预研成果，开关损耗降低20%，电流密度较七代提升15%，延续六代/七代芯片自主开发能力，2025年启动预研。面向工控、光伏、储能等高频开关场景，进一步提升器件效率与功率密度。
【English】Pre-research on the eighth-generation IGBT cuts switching losses by 20% and raises current density by 15% over the seventh generation, launched in 2025. Building on in-house sixth- and seventh-generation development, it targets high-frequency switching in industrial control, photovoltaics and energy storage.